specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage conditi on (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 92111 sy 20110901-s00001 no.a1978-1/8 LV8162TT overview the LV8162TT is a driver ic for single-phase fan motors that achieves low-noise operation by using btl linear output system. as it has a variable speed function in response to the ex ternal pwm input signal, it is best suited for driving cpu cooling fans in notebook pcs and other applications that requ ire low power consumption, low noise, and a variable speed function. functions ? single-phase full-wave operating by btl output ? speed control available by pwm pin ? hall bias output pin ? built-in lock protection and automatic return circuit ? standby mode and quick start function ? start auxiliary function (50% futy start) ? fg (rotation speed detection) signal pin and rd (lock detection) signal pin ? built-in thermal-shutdown (tsd) circuit specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum supply voltage v cc max 7 v maximum output current i out max 0.7 a out pin output withstand voltage v out max 7 v hb pin maximum output current i hb max 10 ma pwm pin withstand voltage v pwm max 7 v fg/rd pin maximum sink current i fg /i rd max 5 ma fg/rd pin output withstand voltage vfg/vrd max 7 v allowable dissipation pd max1 independent ic 200 mw pd max2 with specified substrate *1 400 mw operating temperature topr *2 -30 to +95 c storage temperature tstg -55 to +150 c continued on next page. bi-cmos ic fan motor driver single-phase full-wave driver orderin g numbe r : ena1978
LV8162TT no.a1978-2/8 continued from preceding page. * 1: specified substrate : 20mm 10mm 0.8mm, paper phenol * 2: tj max=150 c must not be exceeded caution 1) absolute maximum ratings represent the va lue which cannot be exceeded for any length of time. caution 2) even when the device is used within the range of abso lute maximum ratings, as a result of continuous usage under hig h temperature, high current, high voltage, or drastic temperature change, the reliability of th e ic may be degraded. please contact us for the further detai ls. recommended operating conditions at ta = 25 c parameter symbol conditions ratings unit recommended supply voltage v cc 5.0 v operating supply voltage range v cc op 2.0 to 6.0 v hall input voltage range vicm 0.2 to v cc -1.2 v pwm input frequency f pwm in 20 to 60 khz electrical characteristics at ta = 25c, v cc = 5v parameter symbol conditions ratings unit min typ max circuit current i cc 0.95 1.3 1.6 ma i cc st 10 30 a hb pin voltage v hb when ireg = 5ma 0.9 1.03 1.2 v out pin high voltage v o h 0.16 0.23 v out pin low voltage v o l i o = 250ma, source + sink 0.1 0.15 v hall amplifier input offset voltage v in ofs -6 6 mv hall amplifier voltage gain gh 44 45.5 47 db pwm pin input low level v pwm l vset = 0.5v 0 v cc 0.2 v pwm pin input high level v pwm h vset = 0.5v v cc 0.8 6 v fg/rd pin low voltage v fg l/v rd l icprto = icpc/icpd 0.3 v fg/rd pin leakage current i fg l/i rd l 10 a fg comparator hysteresis width fghys vset = 0.5v 8 16 sec lock detection output on time lt1 0.4 0.6 0.8 sec lock detection output off time lt2 i fg = 3ma 4 6 8 v lock detection output on/off ratio lrto v fg = 5v 8 10 12 thermal shutdown operating temperature tsd design guarantee * 180 c thermal shutdown hysteresis width tsd design guarantee * 30 c * design guaranteed value (no measurement is performed.) package dimensions unit : mm (typ) 3375 sanyo : msop12(150mil) 3.0 1.1 max 3.0 0.5 4.9 12 12 0.2 0.5 (0.25) (0.85) 0.125 0.08 pd max -- ta 0 0.3 0.4 0.2 0.1 0.5 --30 --20 80 100 60 20 40 0 120 ambient temperature, ta -- c ambient temperature, ta -- c 0.18 0.09 specified board (20 10 0.8mm 3 , paper phenol) independent ic
LV8162TT no.a1978-3/8 pin assignment truth value table in1 in2 pwm out1 out2 fg rd mode h l h l h off l drive (out2 out1) l l l regeneration * off off lock protection. see *1 l h h h l l l drive (out1 out2) l l l regeneration * off off lock protection. see *1 * l l l off l standby mode. see *2 *1: if no fg pulse switching occurs while the lock detecti on output is on, the ic enters lock protection mode. *2: if ?lock protection operation + pwm input low time? is 7 50s or longer is satisfied, the ic enters standby mode. the ic enters standby mode at a low time of 750s only when the ic is started with low pwm input when the power is turned on. block diagram 1 in1 2 3 4 5 6 12 rd 11 hb fg 10 in2 pwm 9 out1 v cc 8 (nc) (nc) 7 gnd out2 top view in1 hb in2 out1 (nc) gnd rd fg pwm v cc (nc) out2 + - + - tsd control hb lock detection osc + - + - 1 2 3 4 5 6 12 11 10 9 8 7 v cc
LV8162TT no.a1978-4/8 application circuit example *1 [power stabilization capacitor] be sure to use the power stabilizati on capacitor with a capacitance of 1f or higher. it cannot be removed. the v cc and gnd are connected using a pattern that is think and short as possible. when a reverse-connection breakdown prevention diode is used and the supply voltage rises due to a coil kickback or other cause, increase the capacitance of the capacitor or us e a zener diode between the power supply and gnd to ensure that the absolute maximum rating is not exceeded. this ic performs synchronous rectification for reducing heat generation and improving efficiency. the synchronous rectification can return the current to the power supply side under certain operating conditions. ? when the output duty drops suddenly ? when the pwm input frequency is low the amount of increase in the supply voltage varies depend ing on whether a reverse-connection breakdown prevention diode is used, on the size of the power supply capacitor, an d fan type, and so rhese factoes must be fully taken into consideration. when the supply voltage rises, in the same way as above, in crease the capacitance of the ca pacitor or use a zener diode between the power supply and gnd to ensure that the absolute maximum rating is not exceeded. *2 [hb pin] constant-voltage output pin. this is used for hall element bias purposes. if the hb pin is not needed because the bias current to the hall element is supplied from the power supply, pull this pin down to gnd with a resistor of about 1k ? . the power supply bias and hb pin bias cannot be used at the same time. to adjust the amplitude of the hall element, inse rt a resistor between the hall element and gnd. *3 [in1 and in2 pins] hall element signal input pin. the wiring must be made as short as possible to prevent carring of noise. if noise is carried, insert a capacitor between in1 and in2 pins. the hall input level must satisfy the following condition: difference voltage between in1 and in2 > operating voltage / hall amplifier gain + hall amplifier input offset. 1 in1 2 hb 3 in2 4 out1 5 (nc) 6 gnd 12 rd 11 fg 10 pwm 9 v cc 8 (nc) 7 out2 h rdout fgout pwmin
LV8162TT no.a1978-5/8 *4 [pwm pin] speed control signal input pin. the pwm pin is pulled up with a 500k ? resistor inside the ic. the 500k ? is used for setting full speed when the pwm pin is open, and if speed control is to be performed by open collector (open drain) input, it is necessary to pull up the pin using a resistor of an appropriate value. if speed control is performed using a push-pull input, a pull-up resistor is not required. when the speed control is performed using the open collector input above, or when push-pull input is used and no pull-up resistor is used, the ic can be used without a sequence (power supply and pwm input can be turned on in any order). it is recommended that a resistor of 1k ? or more is connected in series to protect the pin against misconnection such as ground open and reverse connection. *5 [fg pin] rotatinal speed detection pin. this is open drain output that can detect the rotational speed by the fg output in response to the ohase switching signal. this pin is held off when in standby mode. keep this pin open when it is not to be used. it is recommended that a resistor of 1k ? or more is connected in series to protect the pin against misconnection such as ground open and reverse connection. *6 [rd pin] lock detection pin. this is open drain output that is low during rotation, off when lockup is detected, and low when in standby mode. keep this pin open when it is not to be used. it is recommended that a resistor of 1k ? or more is connected in series to protect the pin against misconnection such as ground open and reverse connection. *7 [low current consumption during standby] the fan motor controlled using this ic can be set to a current consumption of 10a (room temperature, typ.) when in standby mode. however, note that it will not become 10a under any of the following conditions. ? when the hall element bias curr ent is fed from the power supply the current flowing to the hall element is increased ? when connecting a pull-up resistor to the pwm pin. because the pwm pin must be set to low when in stan dby mode, the current flowing to the pull-up resistor is increased. ? when using an rd pin. because the rd pin is held low when in standby mode, the current flowing to the pull-up resistor is increased.
LV8162TT no.a1978-6/8 timing chart standby/opearte switchover *1 tslp=750 s(typ) *2 if the pwm signal is held low during the tslp period and no fg signal switching occurs during the lt1 period, the ic enters standby mode. only when the power is turned on, if the pwm signal is held low during the tslp period, the ic enters standby mode. *3 the fg pin is off and the rd pin is low in standby mode. lock protection *1 both out1 and out2 are low when lock protection mode is established. *2 in the lock protection period, rd is set to off. after lock protection mode is released, rd is set to low when fg signal is switched (off l or l off) *3 if pwm is held low for a period longer than the tslp when lock protection mode is established, the ic enters standby mode. *4 driving starts at 50% duty cycle when the power is turned on, lock protection m ode is released, or the ic is returned from standby mode. (period during which fg switches 5 or 6 times) fg in2 in1 waiting for fg pulse lt1 out1 out2 fan conetrained fan constraint released lock protection lt2 power off power on power on reboot fg detection rd vcc pwm fg in2 in1 hb active standby active standby active t slp t slp waiting for fg pulse lt1
LV8162TT ps no.a1978-7/7 this catalog provides information as of september, 2011. specifications and information herein are subject to change without notice. sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliab ility pr oducts, however, any and all semiconductor products fail or malfunction with some probab ility. it is possible that these pr obab ilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equip ment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd.
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